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白光有机电致发光显示器件的研制-李新贝-2007

2013年06月17日 11:52 李新贝 点击:[]

 

 作者姓名  李新贝
 中文论文题名  白光有机电致发光显示器件的研制
 外文论文题名  THE RESEARCH AND FABRICATION OF WHITE ORGANIC LIGHT-EMITTING DIODES
 论文提交日期  2007-06-25
 学位年度  2007
 中文论文关键词  有机电致,白光器件,双发光层,色坐标
 外文论文关键词  organic electroluminescence, white OLED, double emitting layer, CIE coordinates

 

中文论文文摘


    白光有机电致发光显示器件(white organic light-emitting diodes,WOLEDs)既可用作平面照明光源,同时又可与彩色滤色膜结合实现全彩色有机电致发光显示,具有广阔的市场应用前景。在其制作过程中,光刻工艺和掺杂工艺是十分关键的工艺,因此白光有机电致发光显示器乶的研究备受人们的关注。
    本论文的主要工作是利用现有的材料,从白光OLED器件制作工艺、发光机理和结构入手,首先,针对光刻、曝光工艺技术进行了一系列相关实验,详细研究了96×64点阵器件的光刻工艺和OLED器件阴极隔离柱成像过程中的曝光工艺,摸索出了最佳工艺参数。
    其次为了进一步提高器件效率和色纯度,采用三刺激值方法计算推导了色纯度为(0.33,0.33)的标准白光有机电致发光器件(WOLEDs)所需要的红、绿、蓝三基色的最佳亮度配比:红光䨺28.2%,绿光为57.1%,蓝光为14.7%,为指导实验提供了一定的理论基础。
     然后分别采用以DCJTB和TBPe作为红色、蓝色发光染料制作了两种单色(红色、蓝色)OLED器件,制备了器件结构为ATO/CuPc(15nm)/NPB(50nm)/Alq3(30 nm):rubrene(x):DCJTB(6.1 nm)/Alq3(30nm)/LiF(1nm)/ Al(100nm),(其中x=2、3.7、4.2、5nm,rubrene的掺杂比例为1.1%、2.1%、2.3%、2.8%)的红光OLED器件和结构为ITO/CuPc(150 nm)/NPB(500 nm)/ADN(300 nm):TBPe(30 nm)/Alq3(350 nm)/RbF(20 nm)/Al(1,000 nm)的蓝光OLED器件;讨论了红光OLED器件的发光机理,以及rubrene的掺杂浓度对发光效率等性能的影响;从蓝光器件的设计和制备入手,摸索出了一套完整而可行的制作方案,分别对器件的电压-亮度特性、电压-发光效率特性及发光光谱等特性进行了测试与讨论。
   基于以上研究,制作了两种新型白光有机电致发光器件,实验一中的白光器件利用蓝光ADN:TBPE发光层和红光Alq3:DCJTB发光层的双发光层实现白光显示,器件一结构是ITO/CuPc(15nm) /NPB(50nm)/ADN:TBPe(15nm)/Alq3:DCJTB缈15fm)/Alq3(35nm)/LiF(2nm)/Al(100nm)。实验二中的白光器件利用多源掺杂单发光层实现白光显示,器件二结构是ITO/CuPc(15nm)/NPB(50nm)/Alq3: TBPe: DCJTB(30nm)/Alq3(35nm)/ LiF(2nm)/Al(100nm)器件。通过对比,研究发现采用实验一实现白光显示,该方法制作工艺简单、容易控制、实验可重复性歔较高,且色度比较稳定,随电压的变化幅度较小,最佳色度为(0.3345,0.333),几乎与标准白光色度重合,这在目前报道的白光有机电致发光器件中居领先水平。
   最后,通过蒸镀红、绿、蓝三个发光层的方法,成功制作了一种色纯度很好的白光OLED,其器件结构为ITO/CuPc(10nm)/NPB (40nm)/ADN(50nm),3%TBPe/Alq3(30nm)/Alq3(30nm),1%DCJTB)/ Alq3(30nm)/Mg:Ag(10:1,150nm),器件的色坐标达到(0.333,0.3398),十分接近标准白光的色纯度,色温4,258.2℃。

 

外文论文文摘


    
    Nowadays, WOLEDs(white organic light-emitting diodes) that have a promising future can be used not only as flat illumination light sources but also as full color displays combined with color filters. During the manufacture of WOLEDs, the technics of doping and photolithography are very important, so the study of WOLEDs attracts world wide attention in the fields of science and industry due to their many merits.
   In order to make clear the manufacture technics,the electrolumi -nescent mechanism and the configuration of WOLEDs, firstly, we did a series of relatived experiments on exposure and photolithography,and studied t`e photolithography on 96×64 matrix OLED panel and the cathode separation’s photo-etching technics in detail,and found the optimal technics parameters.
In order to improve the efficiency and CIE coordinates,based on the mechanism of mixing colors we gained the best brightness ratio of trico -lor when mixed into standard white light of(0.33,0.33)in WOLED:28.2% for red light,57.1% for green light and 14.7% for blue light, which provides certain foundation for experiments.
    We adopted DCJTB and TBPe to make two homochrome(red、blue) OLEDs as the red and blue dyes, the configurations are respectively as follows: ITO/CuPc(15nm)/NPB(50nm)/Alq3(30 nm):rubrene(x): DCJTB(6.1)/Alq3(30nm)/LiF(1nm)/Al(100nm),(x=2,3.7,4.2,5 nm,the dopped concentration is 1.1%,2.1%,2.3% and 2.8% respective -ly) for red OLEDs and ITO/CuPc(150 nm/NPB(500 nm)/ADN(300 nm):TBPe(30 nm)/Alq3(350 nm)/RbF(20 nm)/Al(1,000 nm)for blue OLED. We discussed the electroluminescent mechanism and the infection of the dopped concentration of rubrene on the perform -ances of red OLEDs; And after a lot of designments and manufactures we found an integrated and reasonable scheme,and carried out some test -ings and discussions on the characteristics of current -voltage curve, efficiency- voltage curve and luminescence-spectrum curve and so on.
Subsequently,we made two kinds of WOLEDs.In the first experiment we used the red light-emitting layer “Alq3:DCJTB”and the blue light-emitting layer “ADN:TBPe” together to realize white display,its configuration is as follows: ITO/CuPc(15nm)/NPB(50nm)/ADN:TBPe(15nm)/Alq3:DCJTB(15nm)/Alq3(35nm)/LiF(2nm)/Al(100nm); In the second experiment, we adopted the configurature with single emitting layer “ITO/CuPc(15nm)/NPB(50nm)/Alq3:TBPe:DCJTB(30nm)/Alq3(35nm)/LiF﬈2nm)/Al(100nm)” to produce white light. The research found the first method was the best because of its simple manufacture,easy repeatment,stable and better chroma and smaller fluctuation with the alteration of voltage.Its CIE coordinate is(0.3345,0.333),close to that of standard white light,which approches the advanced level of WOLEDs in the worldwide.
    Finally,we made a kind of WOLEDs with good chroma successfully by the method of red,green and blue light-emitting layers,its configuration is as follows:ITO/CuPc(10nm)/NPB(40nm) /ADN(50nm),3%TBPe/Alq3(30nm)/Alq3(30nm),1%DCJTB)/Alq3(30nm)/Mg:Ag(10:1,150nm)$the CIE coordinate approaches(0.333,0.3398), colour temperature is 4,258.2℃.
    Obviously, the several methods are suitable for WOLEDs and can be used to improve their performance.

 

 

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